A D-band monolithic low noise amplifier
Journal
GaAs IC Symposium Technical Digest 1992
Pages
23-26
Date Issued
1992
Author(s)
Abstract
A D-band monolithic two-stage low-noise amplifier (LNA) has been developed using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise high-electron-mobility transistor (HEMT) technology. The amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low noise figure. The monolithic LNA is a first-part success without any tuning on the matching structures. To the authors' knowledge, this is the first reported monolithic amplifier operating above 100 GHz using three terminal devices.>
SDGs
Type
conference paper