A manufacturable high performance 0.1-μm pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs
Journal
GaAs IC Symposium Technical Digest 1992
Pages
251-254
Date Issued
1992
Author(s)
Tan, K.L.
Liu, P.H.
Streit, D.C.
Dia, R.
Han, A.C.
Freudenthal, A.
Velebir, J.
Stolt, K.
Lee, J.
Biedenbender, M.
Lai, R.
Wang, H.
Allen, B.
Abstract
A reproducible and high-performance 0.1- mu m pseudomorphic InGaAs HEMT (high-electron-mobility transistor) MMIC (monolithic microwave integrated circuit) process for W-band MMIC fabrication has been developed. The process has been transferred to production and will offer low-cost/high-volume production of W-band MMICs for both military and commercial applications. In developing this process, emphasis was placed on achieving high producibility without compromising the device performance necessary for successful implementation of W-band circuits. The authors present details of the process, device performance, examples from over 25 W-band MMICs fabricated to date, and the resulting process transfer to a flexible manufacturing line.>
Type
conference paper