A 78-114 GHz monolithic subharmonically pumped GaAs-based HEMT diode mixer
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
12
Journal Issue
6
Pages
209-211
Date Issued
2002
Author(s)
Abstract
A W-band subharmonically pumped (SHP) diode mixer is designed for fixed LO frequency operation. It is fabricated on a 4-mil substrate using 0.15 μm GaAs PHEMT MMIC process. The on-wafer measurement results show that the conversion loss is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO signal is pumped. To our knowledge, this is the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixer. The packaged module measurement shows a similar result. Both the simulation and measurement results are shown in good agreement.
Subjects
Millimeter-wave mixer; MMIC
Other Subjects
Computer aided network analysis; Diodes; Electric frequency control; Electric losses; Harmonic analysis; High electron mobility transistors; Millimeter wave devices; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Conversion loss; Millimeter wave mixer; Monolithic diode mixer; On wafer measurement; Subharmonically pumped diode mixer; Mixer circuits
Type
other