5-GHz transformer combined class-F -1 power amplifier
Journal
RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
Date Issued
2016
Author(s)
Abstract
This paper describes the design of 5-GHz fully integrated CMOS class-F −1 power amplifier (PA) for wireless transmitter applications in 0.18-μm CMOS process. The proposed class-F −1 PA employs the cascode topology with 350-nm common gate device for stability consideration, and the conventional output matching network of class-F −1 PA is replaced by a transformer and a shunt capacitor. The proposed PA exhibits 26.2-dBm saturation power (Psat) at 4.8 GHz, and 41% peak power added efficiency (PAE). The output power at 1-dB compression point (OP1dB) is 25.1 dBm with 4-V supply voltage.
SDGs
Type
conference paper