Monolithic V-band high-electron mobility transistor downconverter component development for satellite communication links
Journal
Journal of Spacecraft and Rockets
Journal Volume
30
Journal Issue
3
Pages
355-359
Date Issued
1993
Author(s)
Abstract
This paper presents the design and performance of a complete monolithic downconverter developed for satellite communication links using high electron mobility transistor technology. Individual components, including V-band amplifiers, a V-band mixer, and a 2-10 GHz intermediate frequency amplifier, were designed, fabricated, and tested. The monolithic downconverter demonstrated a measured conversion gain of 22 dB at 60 GHz rf frequency with a local oscillator drive of +10 mW at 54 GHz, which represents state-of-the-art performance for highly integrated monolithic millimeter-wave integrated circuits at this frequency. © 1992 by H. Wang, Y. Hwang, L. Shaw, B. Nelson, S. Chen, W. Jones, D. Yang, and M. Sholley. © The American Institute of Aeronautics and Astronautics, Inc.
Type
journal article