https://scholars.lib.ntu.edu.tw/handle/123456789/497751
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, H.-H. | en_US |
dc.contributor.author | Su, Y.-C. | en_US |
dc.contributor.author | Huang, W.-L. | en_US |
dc.contributor.author | Kuo, C.-Y. | en_US |
dc.contributor.author | WEI-CHENG TIAN | en_US |
dc.contributor.author | MIIN-JANG CHEN | en_US |
dc.contributor.author | SI-CHEN LEE | en_US |
dc.creator | Chen, H.-H.;Su, Y.-C.;Huang, W.-L.;Kuo, C.-Y.;Tian, W.-C.;Chen, M.-J.;Lee, S.-C. | - |
dc.date.accessioned | 2020-06-11T06:10:02Z | - |
dc.date.available | 2020-06-11T06:10:02Z | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 00036951 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/497751 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84904761113&doi=10.1063%2f1.4890514&partnerID=40&md5=8b2bc07ad1cce2a7d49a3956c1496ad6 | - |
dc.description.abstract | A plasmonic infrared photodetector with narrow bandwidth infrared absorption was investigated. The structure is constructed by a hydrogenated amorphous silicon (a-Si:H) film covered on a patterned Au layer consisting of the Au disk resonators and Au interdigitated electrodes on an Al 2O3/Au substrate. This device exhibited narrow bandwidth infrared absorption corresponded to the localized surface plasmon resonance in the Au-disk/Al2O3/Au tri-layers resonators. The absorption of infrared energy heats up the top hydrogenated amorphous silicon film and reduces the film resistance which can be detected. The optical and electrical characteristics of the photodetector were studied. It was founded that the peak responsivities appeared at the wavelength which coincided with the localized surface plasmon resonance. © 2014 AIP Publishing LLC. | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.subject.other | Alumina; Aluminum oxide; Bandwidth; Hydrogenation; Infrared absorption; Infrared detectors; Light absorption; Photodetectors; Photons; Plasmons; Resonators; Surface plasmon resonance; Electrical characteristic; Hydrogenated amorphous silicon (a-Si:H) films; Hydrogenated amorphous silicon films; Infrared energy; Infrared photodetector; Inter-digitated electrodes; Localized surface plasmon resonance; Narrow bandwidth; Amorphous silicon | - |
dc.title | A plasmonic infrared photodetector with narrow bandwidth absorption | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.4890514 | - |
dc.identifier.scopus | 2-s2.0-84904761113 | - |
dc.relation.journalvolume | 105 | - |
dc.relation.journalissue | 2 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | TSMC-NTU Joint Research Center | - |
crisitem.author.orcid | 0000-0002-3788-2030 | - |
crisitem.author.parentorg | College of Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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