Vertical CdZnO/ZnO quantum-well light-emitting diode
Journal
IEEE Photonics Technology Letters
Journal Volume
25
Journal Issue
3
Pages
317-319
Date Issued
2013
Author(s)
Chen, H.-S.
Ting, S.-Y.
Liao, C.-H.
Chen, C.-Y.
Hsieh, C.
Yao, Y.-F.
Chen, H.-T.
Kiang, Y.-W.
Abstract
A vertical light-emitting diode (VLED) with the CdZnO/n-ZnO quantum wells and n + -ZnO capping layer grown with molecular beam epitaxy and the p-GaN layer grown with metalorganic chemical vapor deposition, is fabricated and characterized. Its performances are compared with those of a lateral LED based on the same epitaxial structure to show the significantly lower device resistance, smaller leakage current, weaker output intensity saturation, relatively lower defect emission, and stronger emissions from the p-GaN and n-ZnO layers in the VLED.
Type
journal article