Low-Power and high-reliability gadolinium oxide resistive switching memory with remote ammonia plasma treatment
Journal
Japanese Journal of Applied Physics
Journal Volume
52
Journal Issue
4 PART 2
Date Issued
2013
Author(s)
Abstract
The effects of remote NH 3 plasma treatment on a Pt/Gd x O y /W resistive random access memory (RRAM) metal–insulator–metal (MIM) structure were investigated. We found that a decrease in the electron barrier height caused by nitrogen incorporation at the Pt–Gd x O y interface can help reduce the operational set and reset voltages. Nitrogen atoms from the NH 3 plasma prevent oxygen atoms in the film from diffusing through Pt grain boundaries into the atmosphere, resulting in superior retention properties (>10 4 s). The stability of the endurance behavior of Gd x O y RRAMs was significantly improved owing to the passivation of defects in Gd x O y films by nitrogen and hydrogen atoms from the remote NH 3 plasma, markedly reducing plasma damage.
SDGs
Type
conference paper