2.2-inch QQVGA AMOLED driven by low temperature top-gate a-IGZO TFT
Journal
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages
307-308
Date Issued
2010
Author(s)
Abstract
We investigated amorphous In 2 O 3 -Ga 2 O 3 -ZnO (a-IGZO) oxide semiconductor material as the active layer of TFTs. The top gate a-IGZO TFTs by using a conventional photolithography technique have good performance without an additional post annealing process. A 2.2- inch QQVGA AMOLED display was demonstrated by using a-IGZO TFT fabricated on glass substrate. The maximum process temperature is 200°C.
Type
conference paper