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  4. Integrated CMOS power sensors for RF BIST applications
 
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Integrated CMOS power sensors for RF BIST applications

Journal
Proceedings of the IEEE VLSI Test Symposium
Journal Volume
2006
Pages
234-238
Date Issued
2006
Author(s)
Hsieh, H.-H.
LIANG-HUNG LU  
DOI
10.1109/VTS.2006.40
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498238
https://www.scopus.com/inward/record.uri?eid=2-s2.0-33751121002&doi=10.1109%2fVTS.2006.40&partnerID=40&md5=2188229265ec4201709dfbb35bd51158
Abstract
This paper presents the design and experimental results of fully integrated CMOS power sensors for RF built-in self-test (BIST) applications. Using a standard 0.18-μm CMOS process, the power sensors, on-chip terminations and switches are integrated with a 5.2-GHz variable-gain amplifier. Built-in RF test was performed on the amplifier in the vicinity of 5.2 GHz for demonstration, With the proposed built-in power sensors and BIST technique, the circuit parameters of the amplifier including the forward gain and gain compression were extracted without expensive automatic test equipments while minimum performance degradation of the device under test (DUT) is maintained at multi-gigahertz frequencies. © 2006 IEEE.
Event(s)
24th IEEE VLSI Test Symposium
Other Subjects
Built-in self test; Power amplifiers; Sensors; Device under test (DUT); Power sensors; CMOS integrated circuits
Type
conference paper

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