An X-Band high-power amplifier using SiGe/Si HBT and lumped passive components
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
11
Journal Issue
7
Pages
287-289
Date Issued
2001
Author(s)
Ma, Z.
Mohammadi, S.
Lu, L.-H.
Bhattacharya, P.
Katehi, L.P.B.
Alterovitz, S.A.
Ponchak, G.E.
Abstract
We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power P/sub sat/ of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs.
SDGs
Type
journal article