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Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC
Resource
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Journal Volume
1998-September
Pages
187-191
Issue Date
1998
Author(s)
Abstract
Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations. © 1998 IEEE.
Conference
1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Other Keyword(s)
Computer aided design; Monolithic integrated circuits; Monolithic microwave integrated circuits; Photoconductivity; Sensitivity analysis; Electrical potential; Fault isolation; Measurement techniques; Micro-machined; Microwave cads; Microwave performance; Process Variation; Sampling probes; Si-Ge alloys