Numerical study on thickness dependence of passivation layer in top-emission organic light-emitting device
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
5740
Pages
149-157
Date Issued
2005
Author(s)
Abstract
In this paper, we demonstrate simulation results of a top-emission organic light-emitting device (TOLED) with a passivation layer and a dielectric layer. Passivation layer is usually composed of silicon dioxide (SiO2) and/or silicon nitride (Si3N4) to protect organic layers from oxygen and moisture. Dielectric layer is a high refractive index thin film for enhancing the external quantum efficiency. The TOLED device has a microcavity structure which comprised of an opaque and high reflective anode and a thin semitransparent cathode. When varying dielectric layer thickness, the output intensity changes and the spectrum peak shifts. The peaks oscillate as a function of the dielectric thickness and the period is around hundreds of nanometers depending on the refractive index of the dielectric layer. When adding the passivation layer, which is on the order of micrometers, more than single peak are observed. With a simple model, we found that the frequency difference between two peaks corresponds to the free spectral range of the fabry-perot cavity formed by passivation layer. When a passivation layers is added on the TOLED, the microcavity effect results in the presence of multi-peaks. It limits the view angle and decreases the color purity.
Subjects
OLED; Optical simualtion
Other Subjects
Computer simulation; Dielectric materials; Electroluminescence; Organic conductors; Passivation; Quantum efficiency; Refractive index; Silica; Thin films; Dielectric layers; Electron transport layers (ETL); Optical simulation; Organic light-emitting device (OLED); Light emitting diodes
Type
conference paper
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