High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing
Journal
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Pages
44-46
Date Issued
2019
Author(s)
Abstract
High dopant (phosphorus) activation of 24% and 27% in strained and relaxed Ge 0.93 Sn 0.07 films are demonstrated by microwave annealing, respectively. The annealing effects on the carrier activation in strained and relaxed GeSn films by RTA and MWA were also investigated.
SDGs
Type
conference paper