The structural and optical properties of gallium arsenic nanoparticles
Journal
Journal of Nanoparticle Research
Journal Volume
6
Journal Issue
4
Pages
415-419
Date Issued
2004
Author(s)
Abstract
Spherical gallium arsenic nanoparticles prepared by thermal evaporation method have been fabricated successfully. The structural and optical properties of GaAs nanoparticles are studied in detail. It is found that while the growth pressure rises from 0.4 to 5 Torr, the average size of GaAs nanoparticles increases from 6 to 12 nm and standard deviation keeps almost the same (∼2 nm) except for 0.5 Torr. By using transmission electron microscopy and Raman spectra, a critical preparation condition has been found which characterize the amorphous to crystal transition of GaAs nanoparticles.
Subjects
GaAs; Nanoparticle; Structural properties; Thermal evaporation
Other Subjects
Amorphous materials; Crystal structure; Evaporation; Inert gases; Nanostructured materials; Optical properties; Pressure effects; Raman scattering; Semiconductor quantum dots; Thermoanalysis; Crystal transition; Pressure rate; Standard deviation; Thermal evaporation; Semiconducting gallium arsenide
Type
journal article