The influence of B2H6 on the growth of silicon nanowire
Journal
Journal of Nanoparticle Research
Journal Volume
7
Journal Issue
6
Pages
615-620
Date Issued
2005
Author(s)
Abstract
The un-doped and boron-doped silicon nanowires (SiNWs) were grown via vapor-liquid-solid (VLS) mechanism by low pressure chemical deposition (LPCVD). The diameters of un-doped and boron-doped SiNWs varied from 18.5 to 75.3 nm and 26.6 to 66.1 nm, respectively. The critical growth temperature of boron-doped SiNWs is 10°C lower than that of un-doped ones and the diameters of the boron-doped SiNWs is always larger than that of the un-doped ones under different growth temperatures. This is because that the introduction of diborane enhanced the dissociation of SiH4 which determines the growth process of SiNW. A growth process of silicon nanowire is proposed to describe the influence of B2H6. © Springer 2005.
Subjects
Boron-doped; Catalyst; Growth temperature; Silicon nanowire
Other Subjects
Boron; Boron compounds; Catalysts; Chemical vapor deposition; Dissociation; Doping (additives); Silicon; Boron-doped; Growth temperature; Low pressure chemical vapor deposition (LPCVD); Silicon nanowires; Nanostructured materials
Type
journal article