https://scholars.lib.ntu.edu.tw/handle/123456789/498721
標題: | Existence of a universal low-energy tail in the photoluminescence of a-SiC: H alloys | 作者: | Chen, Y.-F. SI-CHEN LEE Chen, Jihong |
公開日期: | 1991 | 卷: | 79 | 期: | 2 | 起(迄)頁: | 175-177 | 來源出版物: | Solid State Communications | 摘要: | Photoluminescence measurements have been performed in a-SiC: H alloys prepared by the plasma decomposition of SiH4 and C2H4 gas mixture. It is found that the shift of the peak of the photoluminescence spectrum with increasing the gas flow ratio x ( = 2[C2H4]/(2[C2H4] + [SiH4])) parallels the widening of the optical gap. For x ≤ 0.6 the samples show that the photoluminescence efficiency in the low-energy tail is insensitive to the gas flow ratio. Together with the similar results observed in a-SiGe: H and a-Si: H alloys by Gal et al. [Phys. Rev. B31, 4060 (1985)], it calls for re-examination of the currently accepted model for the dominant-photoluminescence process in good quality a-Si: H. The explanation adapted from the Brodsky's quantum well model is consistent with the experimental facts. © 1991. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498721 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026191591&doi=10.1016%2f0038-1098%2891%2990084-9&partnerID=40&md5=081760aa44b6e5114b92c299d03d2664 |
ISSN: | 00381098 | DOI: | 10.1016/0038-1098(91)90084-9 | SDG/關鍵字: | Photoluminescence--Measurements; Semiconducting Silicon Compounds; Low-energy tails; Optical gaps; Silicon and Alloys |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。