Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices
Journal
Solid State Electronics
Journal Volume
24
Journal Issue
6
Pages
563-568
Date Issued
1981
Author(s)
Abstract
The previously unsolved problem of rectification at AlxGa1-xAs-GaAs N-n heterojunction is found to originate from a vague concept regarding the maximum junction grading width which can sustain rectification. The theoretical current density vs voltage characteristics of this heterojunction system are derived from thermionic emission theory. It is found that, unless the impurity concentration of the AlGaAs layer (prepared by LPE techniques) is less than 1016 cm-3, typical 90-200 Å metallurgical grading widths at the N-n heterojunction interface produce either ohmic or poorly rectifying characteristics. These results explain (1) the lack of rectification in most N-n AlxGa1-xAs-GaAs heterojunctions reported in the literature and (2) the recent observation of significant rectification in high purity (N)Al0.3Ga0.7As-(n)GaAs heterojunctions reported by Chandra and Eastman. © 1981.
Type
journal article