High responsivity quantum-dot infrared photodetector with Al 0.1 Ga 0.9 As blocking layers at both sides of the structure
Journal
Journal of Crystal Growth
Journal Volume
278
Journal Issue
1-4
Pages
351-354
Date Issued
2005
Author(s)
Abstract
Ten-stacked InAs/GaAs quantum-dot infrared photodetector with two Al0.1Ga0.9As blocking layers at both sides of the structure is investigated. High responsivity 1.73 A/W under low applied voltage of -1.4 V is observed at 20 K with peak wavelength ∼7.6 μm. The appearance of 3-6 μm photovoltaic response at higher temperature is attributed to the enhancement of E1-E2 and E2-tunneling transition with increasing temperature. Higher photocurrent avalanche process under negative bias is due to the front blocking layer barrier lowering which results from strain-induced dislocations. © 2005 Published by Elsevier B.V.
Subjects
B3. Infrared devices
SDGs
Other Subjects
Current voltage characteristics; Electric potential; Electron transitions; Electron tunneling; High temperature operations; Photovoltaic cells; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor quantum dots; Photovoltaic response; Quantum-dot infrared photodetectors (QDIP); Quantum-dot structures; Strain-induced dislocations; Infrared detectors
Type
conference paper