Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor
Journal
Applied Physics Letters
Journal Volume
57
Journal Issue
26
Pages
2750-2752
Date Issued
1990
Author(s)
Jan, Y.-H.
Abstract
A GaAs/AlGaAs V-channeled substrate inner stripe laser diode has been successfully integrated with a GaAs/AlGaAs heterojunction bipolar transistor in a vertical configuration for the first time. An ‘‘effective’’ threshold current (base current) as low as 8 mA was obtained. The maximum power output was beyond 5 mW per facet and the single longitudinal mode operation was achieved.
SDGs
Type
journal article