Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector
Journal
Applied Physics Letters
Journal Volume
59
Journal Issue
27
Pages
3592-3594
Date Issued
1991
Author(s)
Chen, C.-H.
Abstract
The monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodiode has been achieved successfully by using one step liquid phase epitaxial growth. Only a single laser beam is emitted vertically from the substrate through the nearby 45° reflector. The highest output power achieved is 22 mW and the threshold current density is 1.92 kA/cm2. The ratio between photocurrent of the detector and the output power of laser diode is 0.32 μA/mW for the type I device and 1 μA/mW for the type II device.
SDGs
Type
journal article