Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched In 0.53 Ga 0.47 As epilayers grown on GaAs substrates
Journal
Applied Physics Letters
Journal Volume
63
Journal Issue
17
Pages
2417-2419
Date Issued
1993
Author(s)
Abstract
From the studies of the initial growth mechanisms of ternary InGaAs and binary InAs epilayers on GaAs, a novel binary buffer layer concept is proposed for application in the large lattice-mismatched heteroepitaxy. Although the growth of this binary buffer layer results in three-dimensional island growth at the initial stage, no vertical-type dislocations are generated and most dislocations are annihilated during the island coalescence stage. Using this new concept and selecting InP as the binary buffer, device-quality In0.53Ga0.47As grown on InP-coated GaAs substrates can be achieved. This technique has the potential to be further applied to other heteroepitaxial systems.
SDGs
Type
journal article