Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature
Details
Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature
Journal
Applied Physics Letters
Journal Volume
65
Journal Issue
17
Pages
2229-2231
Date Issued
1994
Author(s)
Liao, W.-S.
Lin, C.-H.
SI-CHEN LEE
DOI
10.1063/1.112772
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498749
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-29844457849&doi=10.1063%2f1.112772&partnerID=40&md5=1a6f89ba3b8e338e3d7bc5f74e537c58
SDGs
[SDGs]SDG6
Type
journal article