The low-temperature a-Si N x films with high impermeability and high optical gap with application to organic light-emitting diode
Journal
Journal of Applied Physics
Journal Volume
98
Journal Issue
8
Date Issued
2005
Author(s)
Abstract
A low-temperature passivation layer (≦100°C) with high impermeability and a high optical gap is required in top-emitting organic light-emitting diodes. Hydrogenated amorphous silicon nitride (a-SiNx:H) films fabricated by the plasma-enhanced chemical-vapor deposition of SiH4+NH3+N2 at 100°C fulfill this requirement. Infrared-absorption spectroscopy was used to monitor the permeability of the a-SiNx:H film. The optimum a-SiNx:H film with an optical gap of 3.1eV was fabricated at a gas ratio of SiH4:NH3:N2=10:3:197SCCM. The main absorption peaks of the a-SiNx:H films deposited at 70°C did not change at all, even following a 3000-h-long storage test.
SDGs
Type
journal article