Abrupt heterointerfaces in Al 0.35 Ga 0.65 As/Al 0.05 Ga 0.95 As/Al 0.35 Ga 0.65 As quantum well structure grown by liquid-phase epitaxy
Journal
Journal of Applied Physics
Journal Volume
65
Journal Issue
10
Pages
4006-4009
Date Issued
1989
Author(s)
Abstract
The Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure with a 70-Å-thick well has been successfully fabricated by liquid-phase epitaxy at 685 °C. The transmission electron microscope cross-section technique is applied to study the uniformity of the quantum well and the transition width at the heterojunction interface. An interesting phenomenon observed for the first time during liquid-phase epitaxy growth is that the interface of Al0.05Ga0.95As grown on Al0.35Ga0.65As is rather flat and sharp whereas the opposite growth sequence gives rise to a wavy interface. The transition width is less than 10 Å at the Al0.05Ga0.95As/Al0.35Ga0.65As interface but is about 30–50 Å at the inverted Al0.35Ga0.65As/Al0.05Ga0.95As interface. These values are much less than those reported in the literature. The peak energy of the photoluminescence spectrum reveals the quantum size effect.
SDGs
Type
journal article