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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The current leakage mechanism in InSb p + n diodes
Details
The current leakage mechanism in InSb p + n diodes
Journal
Journal of Applied Physics
Journal Volume
67
Journal Issue
11
Pages
7092-7097
Date Issued
1990
Author(s)
Sun, T.-P.
Lee, S.-C.
Yang, S.-J.
SI-CHEN LEE
DOI
10.1063/1.345059
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498791
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-5544244934&doi=10.1063%2f1.345059&partnerID=40&md5=93b118becb580287e15e282a68d9cf25
SDGs
[SDGs]SDG7
Type
journal article