Photoluminescence study of highly mismatched In 0.53 Ga 0.47 As epilayers grown on InP-coated GaAs substrates
Journal
Journal of Applied Physics
Journal Volume
77
Journal Issue
3
Pages
1040-1042
Date Issued
1995
Author(s)
Abstract
Photoluminescence measurement is used to study the properties of In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates. Several structures are designed to test the qualities of the epilayers. It is shown that device-quality In0.53Ga0.47As on a GaAs substrate can be achieved. The effects of hydrogenation using a photochemical-vapor-deposition system are studied, and an enhancement of the band-edge luminescence intensity by a factor of 4 is observed. The resulting intensity even exceeds that of the film grown directly on a lattice-matched InP substrate. In addition, the emission coming from lattice defects is greatly reduced after hydrogenation. These results not only further support the potential application of using binary buffer layer concepts in large lattice-mismatched systems, but also demonstrate that the photochemical-vapor-deposition system is a useful tool for injecting hydrogen into InGaAs epilayers.
Type
journal article