https://scholars.lib.ntu.edu.tw/handle/123456789/498824
標題: | Doping effects on the Raman spectra of silicon nanowires | 作者: | Meng, C.-Y. Chen, J.-L. SI-CHEN LEE Chia, C.-T. |
公開日期: | 2006 | 卷: | 73 | 期: | 24 | 來源出版物: | Physical Review B - Condensed Matter and Materials Physics | 摘要: | Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si. © 2006 The American Physical Society. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498824 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745058734&doi=10.1103%2fPhysRevB.73.245309&partnerID=40&md5=3c9664479eb724572bfbd91bbf99b400 |
ISSN: | 10980121 | DOI: | 10.1103/PhysRevB.73.245309 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。