Multichannel poly-Si thin-film transistors prepared by excimer laser annealing with channel width comparable or smaller than the grain size
Journal
IEEE Transactions on Electron Devices
Journal Volume
55
Journal Issue
8
Pages
2129-2130
Date Issued
2008
Author(s)
Abstract
This paper presents results on low-temperature (< 500 °C) multichannel poly-Si thin-film transistors (TFTs) prepared by KrF excimer laser annealing with a channel width that is comparable to or smaller than the poly-Si grain size. The crosssectional scanning electron microscope is used to measure the effective channel width, and TCAD software is used to simulate the electron density distribution in the channel region. It is found that the TFTs with ten 40-nm-wide multichannels have superior electrical characteristics, including a higher on/off current ratio (> 107), lower leakage current (8.8×10-14 A), less grain boundary defects density, and a better subthreshold swing (0.45 V/dec). © 2008 IEEE.
Subjects
Polycrystalline silicon; Thin-film transistor (TFT)
Other Subjects
Excimer lasers; Film preparation; Gas lasers; Grain size and shape; Krypton; Lasers; Leakage currents; Nonmetals; Polysilicon; Scanning electron microscopy; Semiconducting organic compounds; Silicon; Silicon carbide; Thin film devices; Thin film transistors; Transistors; Channel regions; Channel width; Electrical characteristics; Electron density distributions; Excimer-laser annealing; Grain sizes; KrF excimer lasers; Low temperatures; Multi channel; Multi-channels; On/off current ratio; Poly-Si; poly-Si thin-film transistors; Polycrystalline silicon; Scanning Electron Microscopes; Silicon Carbide devices; TCAD software; Thin-film transistor (TFT); Annealing
Type
journal article