Preparation and Characterization of Indium-Tin-Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin
Journal
Journal of the Electrochemical Society
Journal Volume
134
Journal Issue
8
Pages
2056-2061
Date Issued
1987
Author(s)
Jan, S.-W.
Abstract
Films of the transparent conductor indium‐tin‐oxide (ITO) have been deposited successfully by direct thermal evaporation of metallic indium and tin in an oxygen ambient. Various techniques, such as scanning and transmission electron microscopy, x‐ray diffraction, electron microprobe analysis, Hall measurements, and optical transmission measurements, were applied to determine the crystal structure and to measure grain size, tin concentration, optical transmittance, electron concentration, and the mobility of the ITO films. It is found that the key point in reducing the resistivity of the ITO film is by controlling the tin to indium weight ratio to an optimum value of 3 to 1. ITO films with resistivity as low as and an average optical transmittance as high as 90% can be achieved reproducibly. The films are polycrystalline with a bcc structure and a grain size of approximately 500Å.
SDGs
Type
journal article