Deep ultraviolet enhanced wet chemical etching of gallium nitride
Journal
Applied Physics Letters
Journal Volume
72
Journal Issue
8
Pages
939-941
Date Issued
1998
Author(s)
Abstract
We report a study of the ultraviolet (UV) irradiation effects on the wet chemical etching of unintentionally doped n-type gallium nitride (GaN) layers grown on sapphire substrates. When illuminated with a 253.7 nm mercury line source, etching of GaN is found to take place in aqueous phosphorus acid (H3PO4) and potassium hydroxide (KOH) solutions of pH values ranging from −1 to 2 and 11 to 15, respectively. Formation of gallium oxide is observed on GaN when illuminated in dilute H3PO4 and KOH solutions. These results are attributed to a two-step reaction process upon which the UV irradiation is shown to enhance the oxidative dissolution of GaN.
SDGs
Type
journal article