36-40 GHz TX/RX beamformers for 5G mm-wave phased-array
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Journal Volume
2018-November
Pages
756-758
Date Issued
2019
Author(s)
Chen, C.-N.
Lin, Y.-H.
Liu, Y.-L.
Liao, W.-J.
Nien, Y.-H.
Lu, H.-C.
Tsai, T.-H.
Huang, T.-W.
Abstract
A 36-40 GHz 4-element Tx and Rx beamformer chip set for the fifth generation communication millimeter wave (5G mm-Wave) phased-array applications is presented in this paper. The separated Tx/Rx beamformer chips have 4-bit (22.5°) phase control with 25°phase compensation, and 40 dB peak gain per channel with 20 dB gain control. All of the gate biases, gain and phase tuning functions are controlled by the mixed-signal integrated circuits embedded in the chips, programmable by the microcontroller. The chips are fabricated using TSMC 65-nm CMOS process. The measured OPldB per channel of the Tx beamformer is 12 dBm, and NF (noise figure) of the Rx beamformer is 6-9 dB. The Tx/Rx beamformers measurements performed less than 2 dB RMS gain error and 5.5° RMS phase error with 360° phase tuning, and ±5 o phase variation with 20 dB gain tuning. To the author's knowledge, these chips are the first beamformers in 65-nm CMOS for the FCC 5G mm-Wave 37 GHz (37-38.6 GHz) and 39 GHz (38.6-40 GHz) phased-array applications. This chip set will be the unit cell to be integrated with antenna arrays to construct 32 or 64-element phased-array systems in the near future.
SDGs
Type
conference paper
