Small low-frequency noise IGZO TFTs using a bilayer HfO2/ SiO2 dielectric and the applications of IGZO TFTs to biosensors
Journal
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Date Issued
2013
Author(s)
Abstract
The device exhibits a SS (subthreshold swing) of 95mV/decade, an on to off ratio over 10 9 , a hysteresis free transfer curve, and a high saturation current of 400µA when biased at V GS =2.5V and V DS =3V. Under these high performance, the device exhibits small low frequency noise. The corresponding Hooge's parameter can further reduce to 3.26×10 −4 . Series measurements including contact resistance, constant current stress, high low frequency CV were employed to reveal the origin of the small LFN.
SDGs
Type
conference paper