Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes

Journal

IEEE Journal of Quantum Electronics

Journal Volume

48

Journal Issue

4

Pages

551-556

Date Issued

2012

Author(s)

Chang, C.-H.

Chen, L.-Y.

Huang, L.-C.

Wang, Y.-T.

Lu, T.-C.

JIAN-JANG HUANG

DOI

10.1109/JQE.2012.2187175

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/499670

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863235606&doi=10.1109%2fJQE.2012.2187175&partnerID=40&md5=9f32577e66b4dcd79fc534eab97d3fb9

SDGs

[SDGs]SDG7

Type

journal article