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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes
Details
Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes
Journal
IEEE Journal of Quantum Electronics
Journal Volume
48
Journal Issue
4
Pages
551-556
Date Issued
2012
Author(s)
Chang, C.-H.
Chen, L.-Y.
Huang, L.-C.
Wang, Y.-T.
Lu, T.-C.
JIAN-JANG HUANG
DOI
10.1109/JQE.2012.2187175
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/499670
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863235606&doi=10.1109%2fJQE.2012.2187175&partnerID=40&md5=9f32577e66b4dcd79fc534eab97d3fb9
Type
journal article