https://scholars.lib.ntu.edu.tw/handle/123456789/499796
Title: | Circuit sensing techniques in magnetoresistive random-access memory | Authors: | Wu, B.-C. TSUNG-TE LIU |
Keywords: | Embedded nonvolatile memory (eNVM); Low-power memory circuit; Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Nonvolatile computing; Spin transfer torque (STT); Spintronics | Issue Date: | 2018 | Journal Volume: | 14 | Journal Issue: | 2 | Start page/Pages: | 206-216 | Source: | Journal of Low Power Electronics | Abstract: | In this paper, we review circuit techniques for read performance enhancement of magnetic random-access memories (MRAMs) that are based on magnetic tunnel junction (MTJ) devices with spin transfer torque (STT) switching mechanism for normally-off and nonvolatile computing. First, a brief discussion of the construction and operation of STT-MRAM, and the mechanism of operation of STT-MTJ devices is presented. Circuit sensing techniques are then introduced and divided into two categories - current mode and voltage mode - according to their sensing scheme. These techniques are described in detail with comprehensive case studies from literature, followed by a thorough comparison and discussion of their respective design space. Copyright © 2018 American Scientific Publishers All rights reserved. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/499796 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85052998612&doi=10.1166%2fjolpe.2018.1554&partnerID=40&md5=09f1db9a3f1f331d222eb1e3f74875ef |
ISSN: | 15461998 | DOI: | 10.1166/jolpe.2018.1554 |
Appears in Collections: | 電機工程學系 |
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