A 33.6-to-33.8 Gb/s burst-mode CDR in 90 nm CMOS technology
Journal
IEEE Journal of Solid-State Circuits
Journal Volume
44
Journal Issue
3
Pages
775-783
Date Issued
2009
Author(s)
Abstract
A 33.6-33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2 11 -1 PRBS. The measured bit error rate is less than 10 -8 for a 33.72 Gb/s, 2 7 -1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.
SDGs
Type
journal article