Tunable slow light device using quantum dot semiconductor laser
Journal
Optics Express
Journal Volume
14
Journal Issue
26
Pages
12880-12886
Date Issued
2006
Author(s)
Peng, P.C.
Lin, C.T.
Kuo, H.C.
Tsai, W.K.
Liu, J.N.
Chi, S.
Wang, S.C.
Lin, G.
Yang, H.P.
Lin, K.F.
Chi, J.Y.
Abstract
This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mum fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.
SDGs
Type
journal article