Free-carrier density dependent relaxation lifetime in Si quantum dot optical absorption modulator
Journal
IEEE International Conference on Group IV Photonics GFP
Pages
47-48
Date Issued
2013
Author(s)
Abstract
A 4-nm large Si-QD doped SiO x rib waveguide based optical absorption modulator with free-carrier density dependent relaxation lifetime is demonstrated. The switching response is shortened to 9 μs by reducing pumping duty-cycle to 0.5 μs.
SDGs
Type
conference paper