Ultralow leakage In 0.53 Ga 0.47 As p-i-n photodetector grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate
Journal
IEEE Journal of Quantum Electronics
Journal Volume
41
Journal Issue
6
Pages
749-752
Date Issued
2005
Author(s)
Abstract
A novel top-illuminated In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 /spl mu/m are 13 pA, 0.6 A/W, 3.4/spl times/10/sup -15/ W/Hz/sup 1/2/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
Type
journal article