Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing
Journal
Electrochemical and Solid-State Letters
Journal Volume
8
Journal Issue
12
Pages
D43-D45
Date Issued
2005
Author(s)
Abstract
Localized synthesis of Si nanocrystals (nc-Si) in plasma enhanced chemical vapor deposition-grown Si-rich (SRSO) layer is demonstrated using a laser annealing at intensity of . At an optimized surface temperature of , the precipitated nc-Si in annealed SRSO results in near-infrared photoluminescence at . The refractive index of the laser-annealed SRSO at increases from 1.57 to 2.31 as the laser intensity increases from . Transmission electron microscopy analysis reveals that the average size and volume density of nc-Si embedded in the SRSO layer are about and .
Type
journal article