Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
7
Date Issued
2006
Author(s)
Abstract
Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is investigated. The Ni nanodots can hardly self-aggregate on highly heat-dissipated Si substrate with a thermal conductivity of 148 W/m K. Adding a 200-Å-thick SiO2 buffer with an ultralow thermal conductivity of 1.35 W/m K prevents the formation of NiSi2 compounds, enhances the heat accumulation, and releases the adhesion at Ni/Si interface, which greatly accelerates the self-assembly of Ni nanodots. Dense Ni nanodots with size and density of 30 nm and 7 × 10 10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. © 2006 American Institute of Physics.
Type
journal article