Comparison on the electroluminescence of Si-rich SiNxand SiOxbased light-emitting diodes
Journal
Applied Physics Letters
Journal Volume
96
Journal Issue
26
Date Issued
2010
Author(s)
Abstract
Electroluminescence (EL) of the metal-insulator-semiconductor light-emitting diodes (MISLEDs) made by Si-rich SiNx and SiO x films with buried Si nanocrystals are compared. The SiNx facilitates carrier transport and EL from MISLED with turn-on current and voltage of 4 μA and 12 V by reducing barrier heights at indium tin oxide / SiNx and SiNx /Si-nc interfaces. The SiNx MISLED exhibits larger charge loss rate of 12% within 200 s and shorter delay time of 3.86× 10-4 sec than SiOx one, which limit its external EL quantum efficiency by strong carrier escaping effect due to the insufficient carrier confinement in Si nanocrystals with low interfacial barriers. © 2010 American Institute of Physics.
SDGs
Type
journal article