Single mode InGaAs photonic crystal vertical-cavity surface-emitting lasers

Journal
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Date Issued
2006
Author(s)
Chen, I.L.
Hsu, I.C.
Lai, F.-I.
Chiou, C.H.
Kuo, H.C.
Hsu, W.C.
Lin, G.
Yang, H.P.D.
DOI
URI
URL
Abstract
We have made MOCVD-grown InGaAs photonic crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic applications. Multi-mode InGaAs VCSELs have achieved a maximum power of over 1 mW. Single-mode characteristics of 0.18 mW of the PhC-VCSELs have been made by using the combined AlOx oxide layer with proton-implantion for better current confinement.
SDGs

[SDGs]SDG7

Type
conference paper

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