All silicon rich silicon carbide based solar cell
Journal
4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
Date Issued
2015
Author(s)
Abstract
All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm-1. The open-circuit voltage and short-circuit current of the Si-rich Si0.67C0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm2 with the conversion efficiency and filling factor to 5.51% and 27%, respectively. © 2015 IEEE.
SDGs
Other Subjects
Open circuit voltage; Silanes; Silicon carbide; Solar power generation; Absorbances; Absorption co-efficient; Composition ratio; Filling factor; Fluences; Photovoltaic solar cells; Silicon rich; Visible light region; Silicon solar cells
Type
conference paper