https://scholars.lib.ntu.edu.tw/handle/123456789/500311
標題: | All silicon rich silicon carbide based solar cell | 作者: | Cheng, C.-H. Lin, G.-R. Lin GONG-RU LIN |
公開日期: | 2015 | 來源出版物: | 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 | 摘要: | All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm-1. The open-circuit voltage and short-circuit current of the Si-rich Si0.67C0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm2 with the conversion efficiency and filling factor to 5.51% and 27%, respectively. © 2015 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/500311 | DOI: | 10.1109/ISNE.2015.7131992 | SDG/關鍵字: | Open circuit voltage; Silanes; Silicon carbide; Solar power generation; Absorbances; Absorption co-efficient; Composition ratio; Filling factor; Fluences; Photovoltaic solar cells; Silicon rich; Visible light region; Silicon solar cells |
顯示於: | 電機工程學系 |
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