Bias and temperature effect of an injection locked reflective SOA upstream transmitter in WDM-PON with 200GHz channel bandwidth
Journal
2008 International Conference on Photonics in Switching, PS 2008
Date Issued
2008
Author(s)
Abstract
Biased current and temperature dependence of amplified spontaneous emission injection-locked reflective semiconductor optical amplifier based transmitter directly modulated at 622 Mbit/sec and 1.25 Gbit/sec in DWDM-PON system with channel spacing of 200 GHz are characterized.
SDGs
Type
conference paper
