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  4. Analysis of silicon nanocrystals in silicon-rich SiO2 synthesized by CO2 laser annealing
 
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Analysis of silicon nanocrystals in silicon-rich SiO2 synthesized by CO2 laser annealing

Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
6020
Date Issued
2005
Author(s)
Lin, C.-J.
Lin, G.-R.
Chueh, Y.-L.
GONG-RU LIN  
DOI
10.1117/12.636158
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500350
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-33644983458&doi=10.1117%2f12.636158&partnerID=40&md5=9f94a7d643201498cf74022e04851d2d
Abstract
The localized synthesis of 4.2-5.6 nm-Si nanocrystals (nc-Si) in Si-rich SiO2 (SRSO) by CO2 laser annealing at laser intensity of below ablation-threshold (6 kW/cm2) is demonstrated. Since the SRSO exhibits a high absorption coefficient of up to 0.102 cm-1 at wavelength of 10.6 μm, a direct-writing CO2 laser annealing system with focusing spot size of 0.2 mm2 is used to locally anneal the SRSO and precipitate the ne-Si. A thermophysical model reveals that the surface temperature of SRSO ranging from 130°C to 3350°C is achieved by varying the laser power densities from 1.5 to 13.5 kW/cm2. The CO2 laser-ablation-threshold power density is about 6 kW/cm2, corresponding to the optimized annealing temperature 1285°C at the ablation threshold. The CO2 laser annealing is capable of the precise control on power density and spot size, which benefits from the in-situ and localized annealing temperature control of SRSO film, and also prevents from the eternal damage of the other electronic devices nearby the annealing site. The nc-Si dependent photoluminescence (PL) were observed at 806 nm or longer, whereas the laser-ablation damaged SRSO film exhibits significant blue PL at 410 nm due to the oxygen-related structural defects. The refractive index of the laser-treated SRSO film is increasing from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm2 which is mainly attributed to the increasing density of nc-Si embedded in SRSO. High resolution transmission electron microscopy (HRTEM) analysis reveals that the average size of nc-Si embedded in SRSO film is about 5.3 nm, which correlates well with the theoretical prediction of a corresponding PL at 806 nm. The HRTEM estimated square density of the nc-Si in SRSO film under the laser intensity of 6 kW/cm2 is about 1018 cm-3.
Type
conference paper

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