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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy
Details
Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy
Journal
Journal of Raman Spectroscopy
Author(s)
Talwar, Devki N.
Lin, Hao-Hsiung
Feng, Zhe Chuan
HAO-HSIUNG LIN
DOI
10.1002/jrs.5703
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500378
Type
journal article