Novel In0·41Ga0·59As/In0·53Ga0·47 as strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy
Journal
Electronics Letters
Journal Volume
28
Journal Issue
11
Pages
1039-1040
Date Issued
1992
Author(s)
Huang, C.C.
Abstract
The first InxGa1−xAs/In0·53Ga0·47As strained emitter heterojunction bipolar transistor (SEHBT), with x = 0−41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 A. © 1992, The Institution of Electrical Engineers. All rights reserved.
Subjects
Bipolar devices; Semiconductor growth; Transistors
Other Subjects
Heterojunctions; Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor growth; Small offset voltage; Small signal current gain; Strained emitter heterojunction bipolar transistors; Thin emitter layer; Bipolar transistors
Type
journal article