https://scholars.lib.ntu.edu.tw/handle/123456789/500399
標題: | Novel In0·41Ga0·59As/In0·53Ga0·47 as strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy | 作者: | Huang, C.C. HAO-HSIUNG LIN |
關鍵字: | Bipolar devices; Semiconductor growth; Transistors | 公開日期: | 1992 | 卷: | 28 | 期: | 11 | 起(迄)頁: | 1039-1040 | 來源出版物: | Electronics Letters | 摘要: | The first InxGa1−xAs/In0·53Ga0·47As strained emitter heterojunction bipolar transistor (SEHBT), with x = 0−41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 A. © 1992, The Institution of Electrical Engineers. All rights reserved. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/500399 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026868807&doi=10.1049%2fel%3a19920659&partnerID=40&md5=1947572de874228d2435169dd668346d |
DOI: | 10.1049/el:19920659 | SDG/關鍵字: | Heterojunctions; Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor growth; Small offset voltage; Small signal current gain; Strained emitter heterojunction bipolar transistors; Thin emitter layer; Bipolar transistors |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。