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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Optical characterization of GaAs <inf>0.7</inf>Sb <inf>0.3</inf>/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures
Details
Optical characterization of GaAs 0.7Sb 0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures
Journal
AIP Conference Proceedings
Journal Volume
1399
Pages
583-584
Date Issued
2011
Author(s)
Wu, J.D.
Lin, Y.J.
Huang, Y.S.
Lin, Y.R.
HAO-HSIUNG LIN
DOI
10.1063/1.3666514
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500420
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84862813440&doi=10.1063%2f1.3666514&partnerID=40&md5=0110a822b7290367153ffcde2135a9fa
Type
conference paper