Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

Journal

Journal of Applied Physics

Journal Volume

119

Journal Issue

11

Date Issued

2016

Author(s)

Wu, H.-M.

Tsai, S.-J.

Ho, H.-I.

DOI

10.1063/1.4944322

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500425

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962595029&doi=10.1063%2f1.4944322&partnerID=40&md5=2fc6e59290c6ece62cc95343b531d653

Type

journal article